Evidence of Ga2Se3-Related Compounds on Se-Stabilized GaAs Surfaces
- 1 April 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (4B) , L458
- https://doi.org/10.1143/jjap.31.l458
Abstract
A Se-stabilized GaAs(001) surface is examined by extended X-ray absorption fine structure (EXAFS) analysis. The Se K-edge EXAFS shows components due not only to the first but also the second nearest neighbors, indicating that the Se atoms are incorporated into ordered atomic arrangements. Comparing the interatomic distances to those measured for Ga2Se3 and GaSe, it is concluded that the nature of the surface compound on the Se-stabilized GaAs surface is close to that of Ga2Se3.Keywords
This publication has 11 references indexed in Scilit:
- Amorphous-Se/GaAs –A Novel Heterostructure for Solid-State Devices–Japanese Journal of Applied Physics, 1991
- Vacancy ordering of Ga2Se3 films by molecular beam epitaxyApplied Physics Letters, 1991
- Structure, chemistry, and band bending at Se-passivated GaAs(001) surfacesApplied Physics Letters, 1990
- Structure of the ZnSe/GaAs heteroepitaxial interfaceApplied Physics Letters, 1990
- Influence of GaAs surface stoichiometry on the interface state density of as-grown epitaxial ZnSe/epitaxial GaAs heterostructuresApplied Physics Letters, 1990
- ZnSe/GaAs Heterointerface Stabilization by High-Temperature Se Treatment of GaAs SurfaceJapanese Journal of Applied Physics, 1988
- Improved ab initio calculations of amplitude and phase functions for extended x-ray absorption fine structure spectroscopyJournal of the American Chemical Society, 1988
- Grazing-incidence diffraction and the distorted-wave approximation for the study of surfacesPhysical Review B, 1982
- The crystal structure of β-Ga2Se3Journal of Solid State Chemistry, 1982
- Crystal structure and interatomic distances in GaSePhysica Status Solidi (a), 1975