Properties of Si diodes prepared by alloying Al into n-type Si with heat pulses from a Nd:YAG laser
- 31 July 1970
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 13 (7) , 1103-1109
- https://doi.org/10.1016/0038-1101(70)90107-3
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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