High-efficiency performance of microwave power 4H-SiC amplifiers

Publisher Website

19 November 2002

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 497-500
https://doi.org/10.1109/ispsd.1995.515088

Abstract

No abstract available

Keywords

This publication has 3 references indexed in Scilit:

4H-SiC MESFET with 2.8 W/mm power density at 1.8 GHz
IEEE Electron Device Letters, 1994
High temperature DC and RF performance of p-type diamond MESFET: comparison with n-type GaAs MESFET
IEEE Electron Device Letters, 1994
A large-signal, analytic model for the GaAs MESFET
IEEE Transactions on Microwave Theory and Techniques, 1988