Hall effect in rare-earth–transition-metal amorphous alloy films
- 1 July 1976
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (7) , 3371-3373
- https://doi.org/10.1063/1.323098
Abstract
The Hall effect in amorphous RE‐TM (RE=Gd, Tb, Dy; TM=Fe, Ni) films with a perpendicular magnetization easy axis was measured. It was found that amorphous RE‐Fe films exhibited a remarkable extraordinary Hall effect as observed previously for Gd‐Co sputtered films, and that the observed Hall effect behavior depended much less on the RE element. It was also found that the Hall voltage in Gd‐Ni films was two orders of magnitude smaller than that in RE‐Fe films. These observations suggest that the TM plays a dominant role in the anomalous Hall voltage in RE‐TM alloy systems.This publication has 7 references indexed in Scilit:
- Magnetic properties of amorphous Tb-Fe thin films prepared by rf sputteringApplied Physics Letters, 1976
- Preparation and some magnetic properties of amorphous GdxFe1−x alloy thin filmsJournal of Applied Physics, 1976
- Static Bubble Properties of Amorphous Gd-Fe Alloy FilmsJapanese Journal of Applied Physics, 1976
- Magnetoresistance anisotropy in ferromagnetic Ni-Co alloys at low temperaturesAIP Conference Proceedings, 1975
- Hall effects in Gd-Co sputtered filmsIEEE Transactions on Magnetics, 1974
- Intermetallic compounds of rare earth elements and Ni, Co, or FePhysica Status Solidi (a), 1971
- Intermetallic rare-earth compoundsAdvances in Physics, 1971