Low Noise Amplifiers Using Two Dimensional Electron Gas FETs
- 23 March 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 85 (0149645X) , 543-546
- https://doi.org/10.1109/mwsym.1985.1132034
Abstract
Recently developed LNAs incorporating two dimensional electron gas (2 DEG) FETs for satellite communications earth stations are disclosed, which give epoch-making low noise as FET LNAs to operate. in the 2, 4, 12, and 20 GHz bands at room temperature, especially under cooled state. Typically detailed further is newly developed 4 GHz band LNA with 55 K max. noise temperature at room temperature, noise temperatures of the order of 30 K across 800 MHz bandwidth (3.4 to 4.2 GHz) under thermoelectrically (TE- ) cooled state (about-45°C), which has been adopted in the new earth station conducted by KDD.Keywords
This publication has 3 references indexed in Scilit:
- The present status and future development of low noise amplifiers for satellite communicationsPublished by American Institute of Aeronautics and Astronautics (AIAA) ,1984
- Operation of 6 GHz f.e.t. amplifier at reduced ambient temperatureElectronics Letters, 1974
- Theory of Noisy FourpolesProceedings of the IRE, 1956