Structural changes induced by Bi doping in n-type amorphous (GeSe3.5) 100−xBix
- 1 January 1983
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 54 (1-2) , 173-177
- https://doi.org/10.1016/0022-3093(83)90091-1
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- First evidence for vibrational excitations of large atomic clusters in amorphous semiconductorsSolid State Communications, 1977
- The increase in the conductivity of chalcogenide glasses by the addition of certain impuritiesPhilosophical Magazine, 1976
- Electronic properties of substitutionally doped amorphous Si and GePhilosophical Magazine, 1976
- Optical-Absorption Edge and Raman Scattering inGlassesPhysical Review B, 1973