Reliability Implications of Nitrogen Contamination During Deposition of Sputtered Aluminum/Silicon Metal Films
- 1 April 1984
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE) in 8th Reliability Physics Symposium
- No. 07350791,p. 1-5
- https://doi.org/10.1109/irps.1984.362012
Abstract
Aluminum/Silicon (Al/Si) sputtered metal films for MOS integrated circuit metalization deposited under conditions of nitrogen contamination coupled with a subsequent silicon nitride (Si3N4) passivation can seriously impact product relialility. The reliability implications of this sputtered metallization process will be discussed. The discussion will include film characteristics and structure, description f the failure mechanism, life modeling, accelerated testing, and electromigration behavior.Keywords
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