White noise in MOS transistors and resistors
- 1 November 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Circuits and Devices Magazine
- Vol. 9 (6) , 23-29
- https://doi.org/10.1109/101.261888
Abstract
The theoretical and experimental results for white noise in the low-power subthreshold region of operation of an MOS transistor are discussed. It is shown that the measurements are consistent with the theoretical predictions. Measurements of noise in photoreceptors-circuits containing a photodiode and an MOS transistor-that are consistent with theory are reported. The photoreceptor noise measurements illustrate the intimate connection of the equipartition theorem of statistical mechanics with noise calculations.Keywords
This publication has 7 references indexed in Scilit:
- EKV Model of the MOS TransistorPublished by Springer Nature ,2006
- Computing motion using analog VLSI vision chips: an experimental comparison among four approachesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Subthreshold 1/f noise measurements in MOS transistors aimed at optimizing focal plane array signal processingAnalog Integrated Circuits and Signal Processing, 1992
- CMOS device modeling for subthreshold circuitsIEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing, 1992
- Electronic arts imitate lifeNature, 1991
- Modified 1/f trapping noise theory and experiments in MOS transistors biased from weak to strong inversion—Influence of interface statesIEEE Transactions on Electron Devices, 1984
- Thermal Agitation of Electric Charge in ConductorsPhysical Review B, 1928