Raman scattering of light by optical phonons in Si-Ge-Si structures with quantum dots
- 1 August 1996
- journal article
- Published by Pleiades Publishing Ltd in JETP Letters
- Vol. 64 (3) , 219-224
- https://doi.org/10.1134/1.567178
Abstract
Raman scattering of light by optical phonons in Si-Ge-Si structures with pseudomorphic germanium quantum dots has been investigated. Resonance amplification of the scattering intensity on E0 (Γ7−Γ8) transitions has been observed. It is shown that as a result of the formation of the layer of germanium quantum dots, the resonance energy is ∼0.3 eV higher than in the two-dimensional case.Keywords
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