STM observation of wurtzite GaN(0 0 0 1) surface grown by MBE on 6H-SiC substrates
- 1 June 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 189-190, 370-374
- https://doi.org/10.1016/s0022-0248(98)00314-5
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- STM Observation of Nitrided-Ga on SiMRS Proceedings, 1996
- Interface chemistry and surface morphology in the initial stages of growth of GaN and AlN on α-SiC and sapphireJournal of Crystal Growth, 1994
- Growth of AlN/GaN layered structures by gas source molecular-beam epitaxyJournal of Vacuum Science & Technology B, 1990
- Growth of cubic phase gallium nitride by modified molecular-beam epitaxyJournal of Vacuum Science & Technology A, 1989