Phenomenological model for giant magnetoresistance in lanthanum manganite

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Abstract
The electrical conductivity of dopedlanthanum manganite exhibits activated semiconducting behavior at high temperatures, and a transition to metallic behavior at low temperatures in the ferromagnetic state. These two regimes are combined in a new phenomenological equation for the conductivity that uses a mean‐field magnetization and physically reasonable fitting parameters. This allows us to account quantitatively for reports of giant negative magnetoresistance in single crystals and thin films. We present new data on sputtered epitaxial thin films of La1−x Ca x MnO3, and analyze other recent reports in the literature. The physical basis for such an expression is discussed.

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