X-ray diagnostics of 2D strain profiles in semiconductor crystals
- 1 January 1992
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 7 (1A) , A168-A170
- https://doi.org/10.1088/0268-1242/7/1a/032
Abstract
A theoretical model of X-ray spectrum formation in the triple-crystal diffraction technique for the description of interference phenomena of X-ray scattering in crystals is presented. The proposed numerical algorithm of the solution of the corresponding inverse problems enables one to obtain a detailed two-dimensional strain distribution in the specimen crystal from the data of triple-crystal diffractometry.Keywords
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