Gamma spectroscopy with insulated CdS crystals
- 1 December 1974
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (11) , 676-677
- https://doi.org/10.1063/1.1655357
Abstract
The technique of using thin insulating layers as blocking contacts has been applied to CdS crystals for γ spectroscopy. Detector operation at temperatures up to 100 °C was possible with an energy resolution of 8 keV at 122 keV for a 125‐μm‐thick crystal. During counting no external bias has been applied: Internal fields of the order of 105 V cm−1 can be generated if the insulator‐semiconductor interfaces are charged by illumination under external bias. By comparison of the amounts of charge generated by single γ quanta in a germanium crystal and in a CdS crystal, the mean energy to create a pair has been determined to 6.3 eV for CdS.Keywords
This publication has 4 references indexed in Scilit:
- Continuous high-field operation of CdTe gamma detectors with mis-type contactsNuclear Instruments and Methods, 1974
- Application of the Barrier Method to Semiconductor Spectrometers for Nuclear RadiationZeitschrift für Naturforschung A, 1973
- Electron and Hole Transport in CdS CrystalsProceedings of the Physical Society, 1963
- Primary Photocurrent in Cadmium SulfidePhysical Review B, 1957