Current transport in metal-semiconductor-metal (MSM) structures
- 1 December 1971
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 14 (12) , 1209-1218
- https://doi.org/10.1016/0038-1101(71)90109-2
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Reverse current-voltage characteristics of metal-silicide Schottky diodesSolid-State Electronics, 1970
- Avalanche breakdown in read diodes and pin diodesSolid-State Electronics, 1968
- AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED p-n JUNCTIONS IN Ge, Si, GaAs, AND GaPApplied Physics Letters, 1966
- Planar Epitaxial Silicon Schottky Barrier DiodesBell System Technical Journal, 1965