Proposal for an ultra-compact electron transfer modulator structure

8 July 1993

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 29 (14) , 1293-1295
https://doi.org/10.1049/el:19930863

Abstract

A theoretical model is presented for the current-voltage characteristics of an InGaAs/InAlAs multiquantum-well optical modulator with tunable charge density. The current-voltage characteristics are derived from a drift-diffusion and thermionic emission current model within a selfconsistent Poisson- Schrodinger scheme and show good agreement with experiment. A short-period structure with small leakage current and high breakdown voltage is proposed.

Keywords

SELFCONSISTENT POISSON-SCHRODINGER SCHEME
THEORETICAL MODEL
ULTRACOMPACT DESIGN
DRIFT DIFFUSION MODEL
CURRENT-VOLTAGE CHARACTERISTICS
SHORT-PERIOD STRUCTURE
BREAKDOWN VOLTAGE
TUNABLE CHARGE DENSITY
LEAKAGE CURRENT
ELECTRON TRANSFER MODULATOR
MULTIQUANTUM-WELL
OPTICAL MODULATOR
BRAQWET
THERMIONIC EMISSION CURRENT MODEL
INGAAS-INALAS

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