Influence of stoichiometry and doping on vacancies in n-type GaAs
- 1 December 1999
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 273-274, 705-709
- https://doi.org/10.1016/s0921-4526(99)00615-8
Abstract
No abstract availableKeywords
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