Electrical endpoint detection of VLSI contact plasma etching

1 December 1984

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 5 (12) , 514-517
https://doi.org/10.1109/EDL.1984.26009

Abstract

A precise, in situ monitor of plasma contact etching is described. This method of electrical endpoint detection provides a dc electrical current which is proportional to the total open contacts and gives more than an order of magnitude improvement in signal-to-noise ratio over optical techniques. Endpoint detection is clearly deserved for total contact areas of less than 0.3 percent of a 3-in wafer. Using this method, contact resistances and leakage currents for both p+-n and n+-p junctions, are compatible to that of wet-etched or dry-etched contacts.

Keywords

VERY LARGE SCALE INTEGRATION
CONTACTS
PLASMA APPLICATIONS
ETCHING
MONITORING
OPTICAL INTERFEROMETRY
ELECTRODES
PLASMA MEASUREMENTS
SIGNAL TO NOISE RATIO
STIMULATED EMISSION

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