Frequency dependence of capacitance-voltage characteristics caused by D X centers in Si-doped AlGaAs

Publisher Website
Google Scholar
Abstract
Capacitance of Schottky barrier diodes formed on Si‐doped AlxGa1−xAs (x>0.25) decreases as the measuring frequency increases from 1 kHz to 1 MHz at room temperature. As a result of this frequency dependence, apparent donor concentrations become smaller than the true values at a measuring frequency of 1 MHz, which is widely used for derivation of donor concentrations. This frequency dependence is caused because charging and discharging at DX centers does not follow the 1‐MHz measuring frequency even at room temperature. This result is important for characterizing n‐AlGaAs and for its applications to electronic and optical devices.