Protective device for MOS integrated circuits

1 July 1968

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 56 (7) , 1223-1224
https://doi.org/10.1109/proc.1968.6529

Abstract

Two protective devices for MOS integrated circuits have been extensively tested and proved feasible. They also perform more reliably than conventional Zener diodes. One of them has been used in the fabrication of a dual 25-bit MOS and MNOS integrated shift register and performed reliably.

Keywords

PROTECTION
MOS INTEGRATED CIRCUITS
DETECTORS
TEMPERATURE
LEAKAGE CURRENT
DIELECTRIC SUBSTRATES
POWER MEASUREMENT
NOISE MEASUREMENT
NOISE GENERATORS
POWER SYSTEM MODELING

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