Optical Absorption and Cathodoluminescence of Epitaxial Aluminum Nitride Films

This publication has 8 references indexed in Scilit:

• Epitaxial Growth of Aluminum Nitride on Sapphire Using Metalorganic Chemical Vapor Deposition
  Japanese Journal of Applied Physics, 1981
• Cathodoluminescence of impurity-doped aluminium nitride films produced by reactive evaporation
  Thin Solid Films, 1979
• Optical properties of AlN epitaxial thin films in the vacuum ultraviolet region
  Journal of Applied Physics, 1979
• The optical absorption edge of single-crystal AlN prepared by a close-spaced vapor process
  Applied Physics Letters, 1978
• Optical properties of aluminium nitride prepared by chemical and plasmachemical vapour deposition
  Physica Status Solidi (a), 1977
• Epitaxially grown AlN and its optical band gap
  Journal of Applied Physics, 1973
• Optical Absorption Edge of AIN Single Crystals
  Physica Status Solidi (b), 1968
• The Long-Wavelength Edge of Photographic Sensitivity and of the Electronic Absorption of Solids
  Physical Review B, 1953