Applications of Monte Carlo simulation in the analysis of a sputter-deposition process

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Abstract
Practicality of the Monte Carlo (MC) method developed for the analysis of the particle transport process in sputter-deposition was examined. Titanium film thickness distributions on both faces of a planar substrate facing and not facing a planar-magnetron-type target were compared with corresponding calculated profiles. The results show that sufficient performance of the MC method can be obtained in the usual sputtering condition up to the argon pressure beyond which the majority of particles are transported by the thermal diffusion process.