Tabulation of the theoretical band-to-band luminescence spectra of heavily doped GaAs and application to experimental n-type GaAs spectra

Publisher Website
Google Scholar
Abstract
We have calculated the expressions for band‐to‐band luminescence given by Lasher and Stern for heavily doped GaAs. The resulting values in the case of no k selection rule are tabulated. A comparison between theory and experiment is made, which shows that good agreement can be obtained. From this comparison can be concluded that the band‐to‐band luminescence in heavily doped n‐type GaAs is governed by transitions without k selection, whereas in moderately doped GaAs the transitions are without k selection at low temperatures but with k selection at room temperature.