Scattering from strain variations in high-mobility Si/SiGe heterostructures
- 15 November 1995
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 78 (10) , 6091-6097
- https://doi.org/10.1063/1.360549
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Identification of a Mobility-Limiting Scattering Mechanism in Modulation-Doped Si/SiGe HeterostructuresPhysical Review Letters, 1994
- Imaging of Misfit Dislocation Formation in Strained Layer Heteroepitaxy by Ultrahigh Vacuum Scanning Tunneling MicroscopyPhysical Review Letters, 1994
- Ballistic-electron-emission microscopy of strainedlayersPhysical Review B, 1994
- Observation of buried interfaces with low energy electron microscopyPhysical Review Letters, 1993
- Maximum low-temperature mobility of two-dimensional electrons in heterojunctions with a thick spacer layerPhysical Review B, 1990
- On the stability of surfaces of stressed solidsActa Metallurgica, 1989
- Band lineups and deformation potentials in the model-solid theoryPhysical Review B, 1989
- Screening Effect and Quantum Transport in a Silicon Inversion Layer in Strong Magnetic FieldsJournal of the Physics Society Japan, 1977
- Defects in epitaxial multilayersJournal of Crystal Growth, 1976
- Effect of Thin Oxide Film on Breakdown Voltage of SiliconN+PJunctionJapanese Journal of Applied Physics, 1974