Relation Between Defect Density and Conductivity Changes with Light-Soaking and Annealing in a-Si:H
- 1 January 1992
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Influence of N, O and C impurities in a-Si:HJournal of Non-Crystalline Solids, 1991
- Effect of Reduction in Impurity Content for a-Si:H FilmsJapanese Journal of Applied Physics, 1990
- Nature of Localized States in Hydrogenated Si–Based Amorphous Semiconductor Films Elucidated from LESR and CPMJapanese Journal of Applied Physics, 1989
- Surface and bulk defects in hydrogenated amorphous silicon and silicon-based alloy filmsJournal of Applied Physics, 1988
- Kinetics of the generation and annealing of deep defects and recombination centers in amorphous siliconApplied Physics Letters, 1988
- Nature of paramagnetic centers ina-Si anda-Si:HPhysical Review B, 1988
- Recombination mechanisms in amorphous semiconductors deduced from resonance measurementsJournal of Non-Crystalline Solids, 1985
- Luminescence and ESR studies of defects in hydrogenated amorphous siliconSolid State Communications, 1980
- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977