High temperature, high current, p-channel UMOS 4H-SiC IGBT

• 20 January 2003
• conference paper
• Published by Institute of Electrical and Electronics Engineers (IEEE)
• https://doi.org/10.1109/drc.1999.806318

Abstract

Keywords

• 4H SIC
• HIGH TEMPERATURE
• HIGH CURRENT
• CHANNEL UMOS
• SIC IGBT
• UMOS 4H