Calculation of shallow donor levels in GaN
- 1 June 2000
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 87 (11) , 7859-7863
- https://doi.org/10.1063/1.373467
Abstract
The energy levels of shallow substitutional donors in GaN are calculated in an effective-mass theory that includes the effects of mass anisotropy, central-cell potential correction, and the host conduction band edge wave function. The impurities studied include C, Si, and Ge on the Ga sites and O, S, and Se on the N sites of GaN in both zincblende and wurtzite structures. We present the results for the ground state energies and the transition energies from the ground state to the first few excited states. While a number of measured donor levels can be identified with the isolated substitutional donors treated here, there are also a number of experimental results that are substantially different from the present calculations. We discuss these cases and suggest possible explanations.This publication has 35 references indexed in Scilit:
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