Calculation of projected range distributions of implanted ions in multilayer multi-element substrates

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Abstract
The theoretical model of Ashworth and co-workers (1984) for the calculation of projected range distributions of implanted ions in multi-element multilayer amorphous targets is extended to incorporate the nuclear scattering cross-sections of either Thomas and Fermi or Wilson and co-workers (1977). These cross-sections are presented in integrable forms by means of a computer least-squares fit and are incorporated in the computer program (AMPITS). Range distributions for arsenic, antimony, bismuth, boron and phosphorus ions implanted into bare silicon and/or into silicon coated with either 650 AA of silicon nitride or 920 AA of germanium are presented and are found to be in good agreement with experimental results and other calculations over a wide range of ion energies. The as-deposited energy deposition profile for arsenic implanted into silicon at various energies is also presented. It is shown that the range calculations employing the nuclear scattering cross-section proposed by Wilson and co-workers are in better agreement with experimental measurements than those where the Thomas-Fermi cross-section is used, especially in the low-energy region ( epsilon <0.3) where a dramatic improvement is observed.