Dislocation velocity in indium phosphide
- 7 January 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (1) , 48-50
- https://doi.org/10.1063/1.104439
Abstract
Velocities of α, β, and screw dislocations in InP crystals generated from surface scratches were measured as a function of stress and temperature by means of the etch pit technique. Effects of Zn and S impurities, acting as acceptor and donor, respectively, on the dislocation velocity were also investigated. lt was found that Zn impurity strongly retards the motion of all types of dislocations. On the other hand, S impurity is found to reduce the mobilities of β and screw dislocations while it enhances the mobility of α dislocations.Keywords
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