A charge-sheet capacitance model based on drain current modeling

1 July 1990

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 37 (7) , 1678-1687
https://doi.org/10.1109/16.55755

Abstract

Based upon a common charge-sheet approach analytical models of the drain current and the capacitances of a MOSFET are formulated. Mobility reduction due to velocity saturation and the interface scattering of carriers is taken into account. A saturation criterion is developed from the condition of output conductance continuity. The capacitance modeling requires no additional parameters not contained in the dc model. The comparison with measurement confirms the theory to be useful for analog circuit simulation down to channel lengths of about 1 fm

Keywords

CARRIER MOBILITY
VOLTAGE
PERMITTIVITY
SILICON
CAPACITANCE
VELOCITY SATURATION
ANALOG CIRCUITS