The effect of an electric field on the Auger and impact ionization probabilities in semiconductors

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Abstract
A general result on electronic transitions in a uniform electric field is stated and, when used to evaluate the impact ionization probability in a field, a universal curve is found. Numerical calculations on GaAs do not agree with earlier work by Takeshima (1973), a much reduced effect being found here. Possible reasons for the discrepancy are discussed. When applied to Auger recombination the results are found to conform closely, but not precisely, with earlier work of Gebranzig, Haug and Rosenthal (1975). It is shown that their final approximation is tantamount to neglect of momentum conservation. Numerical calculations on Si, GaP and GaAs all show that the uniform electric field enhances the recombination rate significantly.

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