A parameter sensitivity study for Czochralski bulk flow of silicon
- 31 December 1982
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 56 (1) , 15-19
- https://doi.org/10.1016/0022-0248(82)90007-0
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Digital simulation of Czochralski bulk flow in a parameter range appropriate for liquid semiconductorsJournal of Crystal Growth, 1977
- Inhomogeneities due to thermocapillary flow in floating zone meltingJournal of Crystal Growth, 1975
- Diffusion Coefficients of Impurities in Silicon MeltJapanese Journal of Applied Physics, 1963
- Viscosity of liquidsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1952