Study of a CMOS-JFET-bipolar radiation hard analog-digital technology suitable for high energy physics electronics
- 1 December 1993
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 40 (6) , 1555-1560
- https://doi.org/10.1109/23.273505
Abstract
We present here recent results obtained on a rad-hard mixed analog-digital technology currently under development, which integrates monolithically complementary MOS transistors (CMOS), complementary JFETs (CJFETs) and complementary bipolrr transistors (C-bipolars). This technology is expected to fulfill the hard constraints of LHC detector electronics.This publication has 3 references indexed in Scilit:
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