GaAs 50 GHz Schottky-barrier IMPATT diodes
- 10 January 1974
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 10 (1) , 7-8
- https://doi.org/10.1049/el:19740005
Abstract
Technological improvements have been made to realise high-efficiency GaAs Schottky-barrier IMPATT diodes in the 50 GHz band. Efficiency and output power have been increased by a factor of 1.5 over previous best results. Efficiency as high as 11.0% at 51 GHz and an output power of 420 mW at 53 GHz have been obtained.Keywords
This publication has 0 references indexed in Scilit: