Impact ionisation ratio in In 0.73 Ga 0.27 As 0.57 P 0.43
- 6 July 1978
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 14 (14) , 418-419
- https://doi.org/10.1049/el:19780281
Abstract
A window structure InGaAsP avalanche photodiode (a.p.d.) has been fabricated by using liquid-phase epitaxy on (111B) InP. Multiplication characteristics show that the impact ionisation rate for electrons is larger than that for holes (α>β). The ionisation ratio α/β was estimated to be 3–4. A low-noise a.p.d. will be realised by a structure with electron-initiated multiplication.Keywords
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