RECOVERY PROCESSES IN THE HIGH-TEMPERATURE DEFORMATION OF GERMANIUM, SILICON AND INDIUM ANTIMONIDE

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Abstract
The stress-strain curves of Ge, Si and InSb show, besides the well known recovery stage III, at high temperatures a second recovery stage (stage V). While stage III has been explained in terms of a diffusion-controlled recovery process, for stage V a cross-slip mechanism has been proposed. These ideas are corroborated by an analysis of the first derivative of the stress-strain curves, i.e. the workhardening coefficient, which finally leads to the conclusion, that the regime of power-law breakdown, which is observed in stage III at high stresses, may also be governed by cross-slip. The jog-dragging model of Barrett and Nix, when applied to stage III recovery, yields coefficients of monovacancy self-diffusion of D=41 exp (-0.3 eV/kT) cm2 s-1 for Ge and D=0.63 exp(3.7 eV/kT) cm2s-1 for Si. These parameters favorably compare to those evaluated from tracer diffusion experiments

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