Weak beam observation of dislocation loops in silicon
- 16 September 1971
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 7 (1) , K1-K3
- https://doi.org/10.1002/pssa.2210070137
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Correlation of electron microscope studies with the electrical properties of boron implanted siliconRadiation Effects, 1970
- Investigations of dislocation strain fields using weak beamsPhilosophical Magazine, 1969
- The distribution of condensed defect structures formed in annealed boron-implanted siliconProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1969