PREFERRED ORIENTATION IN BIAS-SPUTTERED NICKEL CHROMIUM FILMS
- 1 December 1968
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 13 (11) , 381-384
- https://doi.org/10.1063/1.1652480
Abstract
It is shown that substrate bias during dc sputtering effectively reduces oxygen contamination in nichrome films. This in turn leads to an enhancement of the preferred orientation of the deposits. Moreover, it appears that substrate bias plays an additional role in film orientation which is related to the initial nucleation and growth conditions.Keywords
This publication has 7 references indexed in Scilit:
- The effect of electrical charge on the growth of thin metal filmsThin Solid Films, 1967
- The effect of low-pressure oxygen, present during condensation, on the structure of tin filmsPhilosophical Magazine, 1967
- Role of Hydrogen in the Sputtering of Nickel–Chromium FilmsJournal of Vacuum Science and Technology, 1967
- ORIENTATION EFFECTS OF AN APPLIED DC FIELD ON NaCl FILMS DEPOSITED ON SILICA GLASSApplied Physics Letters, 1967
- GROWTH OF THIN METAL FILMS UNDER APPLIED ELECTRIC FIELDApplied Physics Letters, 1965
- Thin Films Deposited by Bias SputteringJournal of Applied Physics, 1965
- Effect of Residual Gases on Superconducting Characteristics of Tin FilmsJournal of Applied Physics, 1961