Tuning of ZnSe–GaAs band discontinuities in heterojunction diodes
- 18 November 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (21) , 3233-3235
- https://doi.org/10.1063/1.118020
Abstract
The conduction band offset in ZnSe/GaAs n‐p heterodiodes was determined from measurements of the low‐temperature tunneling current of photoinjected carriers. We found widely different discontinuities for heterojunctions fabricated with different Zn/Se flux ratios, with conduction band offsets as high as 0.75 eV for Se‐rich interfaces, and as low as 0.26 eV for Zn‐rich interfaces.Keywords
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