Absorption characteristics of GaSb/InAs and InSb/InAs SLSs grown on (111) GaAs by MOVPE
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1) , 518-519
- https://doi.org/10.1016/0022-0248(91)90514-6
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- GaSb/InAs heterojunctions grown by MOVPEJournal of Crystal Growth, 1991
- Band-gap narrowing in ordered and disordered semiconductor alloysApplied Physics Letters, 1990
- Demonstration of an InAsSb strained-layer superlattice photodiodeApplied Physics Letters, 1988
- Extended infrared response of InAsSb strained-layer superlatticesApplied Physics Letters, 1988