Oxygen- and carbon-related defects in edge-defined film-fed growth silicon ribbon
- 15 August 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (4) , 2208-2210
- https://doi.org/10.1063/1.341684
Abstract
In this communication we report on infrared analysis of the SiOx-like defects segregated close to the surface of the edge-defined film-fed growth polycrystalline ribbons. These defects cause an absorption band very similar to that of the SiOx phase, but they are thermally unstable, and can be annealed by 650 °C thermal treatment. It is concluded that they are quenched high-temperature defects formed during the film growth. Possible nucleation centers for those defects are found to be C and/or SiC aggregates close to the surface.This publication has 8 references indexed in Scilit:
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