Effect of hydrogen termination on the work of adhesion between rough polycrystalline silicon surfaces
- 15 April 1997
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 81 (8) , 3474-3483
- https://doi.org/10.1063/1.365045
Abstract
A novel micromachined test structure has been used to measure the work of adhesion between polycrystalline silicon surfaces. The effects of several surface treatments, including a hydrogen- and an ammonium-fluoride-induced hydrogen termination and a hydrogen peroxide chemical oxidation, have been investigated with these test structures. A reduction in the average apparent work of adhesion by a factor of 2000 has been observed on the NH4F-treated surface compared to the oxide-coated surface. By using x-ray photoelectron spectroscopy and atomic force microscopy, the observed reduction is traced to the combined effect of the surface chemistry and topography. This work demonstrates that a hydrophobic, rough surface provides a significant reduction of the apparent work of adhesion in polysilicon micromachined devices.This publication has 20 references indexed in Scilit:
- Stability of ammonium fluoride-treated Si(100)Journal of Applied Physics, 1995
- Fundamentals of two-step etching techniques for ideal silicon-hydrogen termination of silicon(111)Journal of Applied Physics, 1994
- Stiction of surface micromachined structures after rinsing and drying: model and investigation of adhesion mechanismsSensors and Actuators A: Physical, 1994
- Wet chemical etching of Si(100) surfaces in concentrated NH4F solution: formation of (2 × 1)H reconstructed Si(100) terraces versus (111) facettingSurface Science, 1993
- Morphology of hydrofluoric acid and ammonium fluoride-treated silicon surfaces studied by surface infrared spectroscopyJournal of Applied Physics, 1992
- Nature of static friction time dependenceJournal of Physics D: Applied Physics, 1992
- Step-flow mechanism versus pit corrosion: scanning-tunneling microscopy observations on wet etching of Si(111) by HF solutionsChemical Physics Letters, 1991
- Electron-energy-loss characterization of the H-terminated Si(111) and Si(100) surfaces obtained by etching in NH4FChemical Physics Letters, 1991
- Overcoats and Lubrication for Thin Film DisksMRS Bulletin, 1990
- Surface micromachining for microsensors and microactuatorsJournal of Vacuum Science & Technology B, 1988