Evidence for a Valley-Occupancy Transition in Si Inversion Layers at Low Electron Densities
- 20 April 1981
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 46 (16) , 1096-1099
- https://doi.org/10.1103/physrevlett.46.1096
Abstract
Careful studies of intersubband transition energies versus surface electron density have been made in Si(100) inversion layers. An observed change in slope and shift to higher energies at low densities is consistent with a recent model of a two-valley to one-valley occupancy transition driven by many-body effects.Keywords
This publication has 9 references indexed in Scilit:
- Interaction-induced transition at low densities in silicon inversion layerSurface Science, 1980
- Temperature-Dependent Resistivities in Silicon Inversion Layers at Low TemperaturesPhysical Review Letters, 1980
- A simplified treatment of exchange and correlation in semiconducting surface inversion layersSolid State Communications, 1980
- Interaction-Induced Transition at Low Densities in Silicon Inversion LayerPhysical Review Letters, 1979
- Frequency domain studies of intersubband optical transitions in Si inversion layersSolid State Communications, 1979
- The phonon-mediated intervalley electron-electron interaction in siliconSolid State Communications, 1978
- Valley-Valley Splitting in Inversion Layers on a High-Index Surface of SiliconPhysical Review Letters, 1978
- Inter-subband optical absorption in space-charge layers on semiconductor surfacesZeitschrift für Physik B Condensed Matter, 1977
- Density-functional calculation of sub-band structure in accumulation and inversion layersPhysical Review B, 1976