Phase relations, crystal growth and heteroepitaxy in the quaternary system Cd, Sn, In and P
- 1 October 1974
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 24-25, 260-265
- https://doi.org/10.1016/0022-0248(74)90315-7
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- The preparation of CdSnP2/InP heterojunctions by liquid phase epitaxy from Sn-solutionJournal of Electronic Materials, 1974
- Preparation and properties of CdSnP2/InP heterojunctions grown by LPE from Sn solutionJournal of Applied Physics, 1974
- The growth of InP crystals from the meltJournal of Electronic Materials, 1974
- Phase Equilibria and Vapor Pressures of Pure Phosphorus and of the Indium/Phosphorus System and Their Implications Regarding Crystal Growth of InPJournal of the Electrochemical Society, 1974
- CdSnP2–InP heterodiodes for near-infrared light-emitting diodes and photovoltaic detectorsApplied Physics Letters, 1973
- On the ultimate lower limit of attenuation in glass optical waveguidesApplied Physics Letters, 1973
- The CdP2-Sn system and some properties of CdSnP2 crystalsMaterials Research Bulletin, 1971