Contact Hole Etch Scaling toward 0.1 µm

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Abstract
Reactive ion etching (RIE)-lag, i.e., the dependence of contact etched depth D on contact diameter φ, for deep quarter micron contact hole etching has been studied down to 0.1 µm contact. The nonlinearity between φ and D was found to be successfully converted into a linear relationship with reciprocal plots of φ and modified contact etched depth (D+h), taking into account the resist thickness h. In addition, by introducing the dependence on etching time t as the intercept in the relationship, the simple experimental equation was proposed in a new form to describe RIE-lag. This permits the prediction of etching rates of smaller contacts in the future and will be useful to investigate the etching mechanism.

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