THERMAL EFFECTS IN SEMICONDUCTOR REFLECTIVITY ENHANCEMENT
- 15 April 1967
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 10 (8) , 227-229
- https://doi.org/10.1063/1.1754923
Abstract
The time dependence of the enhanced reflectivity of semiconductors, produced and monitored by a pulsed argon ion laser, showed that the electron‐hole plasma responsible for the enhanced reflectivity was thermally generated.Keywords
This publication has 6 references indexed in Scilit:
- Giant pulse laser operation with semiconductor mirrorsIEEE Journal of Quantum Electronics, 1966
- Semiconductor Surface Damage Produced by Ruby LasersJournal of Applied Physics, 1965
- Modulation of the Reflectivity of SemiconductorsJournal of Applied Physics, 1965
- SWITCHING OF SEMICONDUCTOR REFLECTIVITY BY A GIANT PULSE LASERApplied Physics Letters, 1964
- Generation of Giant Optical Maser Pulses using a Semi-conductor MirrorNature, 1964
- Contribution of Current Carriers in the Reflection of Light from SemiconductorsPhysical Review B, 1957