Optical switching of coherent VO2 precipitates formed in sapphire by ion implantation and annealing

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Abstract
Coherent precipitates of vanadium dioxide have been formed in the near‐surface region of sapphire by the stoichiometric coimplantation of vanadium and oxygen combined with subsequent thermal processing at temperatures ranging from 700 to 1000 °C. The embedded VO2 precipitates, which are three‐dimensionally oriented with respect to the Al2O3 host lattice, undergo a first‐order monoclinic‐to‐tetragonal (and also semiconducting‐to‐metallic) phase transition at ∼77 °C. This transformation is accompanied by a significant variation in the optical transmission of the implanted region and results in the formation of an optically active, thermally ‘‘switchable’’ surface region on Al2O3.

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