The determination of the Huang-Rhys factor for a deep level in a semiconductor
- 10 October 1981
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 14 (28) , L845-L849
- https://doi.org/10.1088/0022-3719/14/28/001
Abstract
A graphical method is presented for determining the Huang-Rhys factor for a deep level in a semiconductor from a measurement of the multiphonon capture cross section. An alternative method proposed recently by Robbins (1980) is examined critically and the relative advantages of the two methods compared.Keywords
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