Sharp band edge photoluminescence of high-purity CuInS2 single crystals
- 5 February 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (6) , 742-744
- https://doi.org/10.1063/1.1345802
Abstract
Temperature-dependent photoluminescence measurements were carried out between 8 and 300 K on CuInS2 single crystals grown by a traveling heater method. Ten distinct peaks were present in the near-band edge region. Four unknown peaks, observed at 8 K, were found to be due to bound exciton emission. Moreover, the luminescence remained stable up to room temperature.Keywords
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