A comparison of GaAs HJBT and silicon bipolar technologies for high-speed analog-to-digital converters
- 1 June 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 24 (3) , 609-616
- https://doi.org/10.1109/4.32015
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Process HE: a highly advanced trench isolated bipolar technology for analogue and digital applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Electrical Characterization of Packages for High-Speed Integrated CircuitsIEEE Transactions on Components, Hybrids, and Manufacturing Technology, 1985
- A 6-Bit/200-MHz Full Nyquist A/D ConverterIEEE Journal of Solid-State Circuits, 1985
- A fully parallel 10-bit A/D converter with video speedIEEE Journal of Solid-State Circuits, 1982