Progress toward a metal-base transistor
- 1 January 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Spectrum
- Vol. 23 (2) , 38-42
- https://doi.org/10.1109/MSPEC.1986.6370998
Abstract
Interest has been revived in the silicon metal-base transistor because of significant progress in growing thin, single-crystal metal films on silicon. The unique properties of silicides are described and the possibility of attaining ballistic transport in silicides is discussed. The use of the metal-base transistor as a physical probe is considered.Keywords
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